Vertically stacked transistor devices with isolation wall structures containing an electrical conductor

ABSTRACT

An integrated circuit structure comprises a lower device layer that includes a first structure comprising a first set of transistor fins and a first set of contact metallization. An upper device layer is bonded onto the lower device layer, where the upper device layer includes a second structure comprising a second set of transistor fins and a second set of contact metallization. At least one power isolation wall extends from a top of the upper device layer to the bottom of the lower device layer, wherein the power isolation wall is filled with a conductive material such that power is routed between transistor devices on the upper device layer and the lower device layer.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application is a U.S. National Phase Application under 35U.S.C. § 371 of International Application No. PCT/US2017/068469, filedDec. 27, 2017, entitled “VERTICALLY STACKED TRANSISTOR DEVICES WITHISOLATION WALL STRUCTURES CONTAINING AN ELECTRICAL CONDUCTOR,” whichdesignates the United States of America, the entire disclosure of whichis hereby incorporated by reference in its entirety and for allpurposes.

TECHNICAL FIELD

Embodiments of the disclosure are in the field of integrated circuitstructures and, in particular, vertically stacked transistor deviceswith isolation wall structures containing an electrical conductor.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips.

For example, shrinking transistor size allows for the incorporation ofan increased number of memory or logic devices on a chip, lending to thefabrication of products with increased capacity. The drive for ever-morecapacity, however, is not without issue. The necessity to optimize theperformance of each device becomes increasingly significant. In themanufacture of integrated circuit devices, multi-gate transistors, suchas tri-gate transistors, have become more prevalent as device dimensionscontinue to scale down. In conventional processes, tri-gate transistorsare generally fabricated on either bulk silicon substrates orsilicon-on-insulator substrates. In some instances, bulk siliconsubstrates are preferred due to their lower cost and compatibility withthe existing high-yielding bulk silicon substrate infrastructure.Scaling multi-gate transistors has not been without consequence,however. As the dimensions of these fundamental building blocks ofmicroelectronic circuitry are reduced and as the sheer number offundamental building blocks fabricated in a given region is increased,the constraints on the semiconductor processes used to fabricate thesebuilding blocks have become overwhelming.

Consequently, fabrication of the functional components needed for futuretechnology nodes may require the introduction of new methodologies orthe integration of new technologies in current fabrication processes orin place of current fabrication processes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view taken along a gate “width” ofa fin-type transistor suitable for use in a monolithic stackedtransistor architecture, in accordance with an embodiment of the presentdisclosure.

FIGS. 1B and 1C illustrate angled and direct cross-sectional views of athin film integrated circuit structure, in accordance with an embodimentof the present disclosure.

FIG. 1D illustrates a cross-sectional view taken along a gate “width” ofa bulk FinFet transistor suitable for use in a monolithic stackedtransistor architecture, in accordance with another embodiment of thepresent disclosure.

FIG. 1E illustrates a cross-sectional view taken along a gate “width” ofa silicon-on-insulator (SOI) FinFet suitable for use in a monolithicstacked transistor architecture, in accordance with further embodimentof the present disclosure.

FIG. 2 is a three-dimensional view illustrating a lateral cross-sectionof a stacked device architecture according to one embodiment.

FIG. 3A illustrates an embodiment where the materials filling the powerisolation wall in the lower device layer differ from the materialsfilling the power isolation wall in the upper device layer.

FIG. 3B illustrates another embodiment where the power isolation wall204 is formed without an insulating liner.

FIGS. 4A-4I are illustrative cross-sectional views representing variousoperations for fabricating an integrated device structure comprising avertically stacked transistor device architecture with a conductingpower isolation wall according to one embodiment.

FIGS. 5A and 5B are top views of a wafer and dies that a verticallystacked transistor device architecture with a conducting power isolationwall, in accordance with one or more of the embodiments disclosedherein.

FIG. 6 is a cross-sectional side view of an integrated circuit (IC)device that may include a vertically stacked transistor devicearchitecture with a conducting power isolation wall, in accordance withone or more of the embodiments disclosed herein.

FIG. 7 is a cross-sectional side view of an integrated circuit (IC)device assembly that may a vertically stacked transistor devicearchitecture with a conducting power isolation wall, in accordance withone or more of the embodiments disclosed herein.

FIG. 8 illustrates a computing device in accordance with oneimplementation of an embodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

Vertically stacked transistor devices with isolation wall structurescontaining an electrical conductor are described. In the followingdescription, numerous specific details are set forth, such as specificmaterial and tooling regimes, in order to provide a thoroughunderstanding of embodiments of the present disclosure. It will beapparent to one skilled in the art that embodiments of the presentdisclosure may be practiced without these specific details. In otherinstances, well-known features, such as single or dual damasceneprocessing, are not described in detail in order to not unnecessarilyobscure embodiments of the present disclosure. Furthermore, it is to beunderstood that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale. Insome cases, various operations will be described as multiple discreteoperations, in turn, in a manner that is most helpful in understandingthe present disclosure, however, the order of description should not beconstrued to imply that these operations are necessarily orderdependent. In particular, these operations need not be performed in theorder of presentation.

Certain terminology may also be used in the following description forthe purpose of reference only, and thus are not intended to be limiting.For example, terms such as “upper”, “lower”, “above”, “below,” “bottom,”and “top” refer to directions in the drawings to which reference ismade. Terms such as “front”, “back”, “rear”, and “side” describe theorientation and/or location of portions of the component within aconsistent but arbitrary frame of reference which is made clear byreference to the text and the associated drawings describing thecomponent under discussion. Such terminology may include the wordsspecifically mentioned above, derivatives thereof, and words of similarimport.

Embodiments described herein may be directed to front-end-of-line (FEOL)semiconductor processing and structures. FEOL is the first portion ofintegrated circuit (IC) fabrication where the individual devices (e.g.,transistors, capacitors, resistors, etc.) are patterned in thesemiconductor substrate or layer. FEOL generally covers everything up to(but not including) the deposition of metal interconnect layers.Following the last FEOL operation, the result is typically a wafer withisolated transistors (e.g., without any wires).

Embodiments described herein may be directed to back end of line (BEOL)semiconductor processing and structures. BEOL is the second portion ofIC fabrication where the individual devices (e.g., transistors,capacitors, resistors, etc.) are interconnected with wiring on thewafer, e.g., the metallization layer or layers. BEOL includes contacts,insulating layers (dielectrics), metal levels, and bonding sites forchip-to-package connections. In the BEOL part of the fabrication stagecontacts (pads), interconnect wires, vias and dielectric structures areformed. For modern IC processes, more than 10 metal layers may be addedin the BEOL.

Embodiments described below may be applicable to FEOL processing andstructures, BEOL processing and structures, or both FEOL and BEOLprocessing and structures. In particular, although an exemplaryprocessing scheme may be illustrated using a FEOL processing scenario,such approaches may also be applicable to BEOL processing. Likewise,although an exemplary processing scheme may be illustrated using a BEOLprocessing scenario, such approaches may also be applicable to FEOLprocessing.

One or more embodiments described herein are directed to structures andarchitectures for fabricating vertically stacked transistor devices withisolation wall structures containing an electrical conductor.Embodiments may include or pertain to one or more of monolithicstacking, stacked transistors, and vertical integration. One or moreembodiments may be implemented to realize high performance stackedtransistors to potentially increase monolithic integration in SoCs offuture technology nodes.

In accordance with one or more embodiments described herein, amonolithic stacked transistor architecture is disclosed in which anelectrical connection is made between an upper device layer and a lowerdevice layer. This electrical connection is formed via formation of apower isolation wall that is located between adjacent transistor devicesand filled with a metal electrical conductor and extends from the upperdevice layer to the lower device layer. The present embodiments improveon known approaches for routing metal from the upper device layer to thelower device layers in that the use of an electrically conductingisolation wall does not increase cross-sectional footprint of thestacked structure.

To provide context, FIG. 1A illustrates a cross-sectional view takenalong a gate “width” of a fin-type transistor suitable for use in amonolithic stacked transistor architecture, in accordance with anembodiment of the present disclosure.

In this example, the fin-type transistor comprises a non-planarthin-film transistor (TFT) 150 formed above a substrate 152, e.g., on aninsulating layer 154 above a substrate. A pair of dielectric fins 155 ison the insulating layer 154. The non-planar TFT 150 includes asemiconducting oxide material 156, or similarly suitable channelmaterial. The semiconducting oxide material 156 is conformal with thepair of dielectric fins 155 and with exposed portions of the insulatinglayer 154 between the pair of dielectric fins 155. A gate electrode 158is formed on a gate dielectric layer 164 formed on the semiconductingoxide material 156. The gate electrode 158 may include a fill material160 on a workfunction layer 162, as is depicted. The gate electrode 158may expose regions 166 of the semiconducting oxide material 156 and thegate dielectric layer 164, as is depicted. Alternatively, thesemiconducting oxide material 156 and the gate dielectric layer 164 havea same lateral dimension as the gate electrode 158. It is to beappreciated that source/drain regions are into and out of the page ofthe view of FIG. 1B.

The non-planar TFT 150 has an effective gate width that is the length ofthe conformal semiconducting oxide material 156 between locations A′ andB′, i.e., the full length including undulating portions over the topsand sidewalls of the dielectric fins 155, as is depicted in FIG. 1B. TheTFT 150 may be referred to herein as a non-planar BEOL field effecttransistor (FET). In comparison to a conventional planar TFT, thestructure of FIG. 1A highlights the advantage of a non-planararchitecture to increase effective gate width, referred to herein as arelatively increased width.

To highlight other aspects of a fin-type transistor topography, FIGS. 1Band 1C illustrate angled and direct cross-sectional views of a thin filmintegrated circuit structure, in accordance with an embodiment of thepresent disclosure. It is to be appreciated that one dielectric fin isillustrated in FIGS. 1B and 1C for simplification. Embodiments mayinclude a single device fabricated over one (FIGS. 1B and 1C), two (FIG.1A) or more such dielectric fins.

Referring to FIGS. 1B and 1C, an integrated circuit structure 170includes a dielectric fin 155 on an insulator layer 154 above asubstrate 152. The insulator structure 155 has a topography that variesalong a plane (ab) parallel with a global plane of the substrate 152.The dielectric fin 155 has a top and sidewalls. A semiconducting oxidematerial 156, or similarly suitable channel material, is on the top andsidewalls of the dielectric fin 155. A gate electrode 158 is over afirst portion of the semiconducting oxide material 156 on the top andsidewalls of the dielectric fin 155. The insulator structure 155 has atopography that varies along a plane (ab) parallel with a global planeof the substrate 152. The gate electrode 158 has a first side opposite asecond side. A first conductive contact (left 174) is adjacent the firstside of the gate electrode 158, over a second portion of thesemiconducting oxide material 156 on the top and sidewalls of thedielectric fin 155. A second conductive contact (right 174) is adjacentthe second side of the gate electrode 158, over a third portion of thesemiconducting oxide material 156 on the top and sidewalls of thedielectric fin 155.

In an embodiment, the integrated circuit structure 170 further includesa gate dielectric layer 164 between the gate electrode 158 and the firstportion of the semiconducting oxide material 156 on the top andsidewalls of the dielectric fin 155, as is depicted in FIG. 1C. In anembodiment, the integrated circuit structure 170 further includes afirst dielectric spacer (left 172) between the first conductive contact174 and the first side of the gate electrode 158, the first dielectricspacer 172 over a fourth portion of the semiconducting oxide material156 on the top and sidewalls of the dielectric fin 155 as is depicted inFIG. 1B. A second dielectric spacer (right 172) is between the secondconductive contact 174 and the second side of the gate electrode 158,the second dielectric spacer 172 over a fifth portion of the secondsemiconducting oxide material 156 on the top and sidewalls of thedielectric fin 155, as is depicted in FIG. 1C. In one such embodiment,the gate dielectric layer 164 is further along the first and seconddielectric spacers 172, as is also depicted in FIG. 1C.

In an embodiment, the insulator structure 155 (such as fin or fins 155)is composed of a dielectric material such as, but not limited to,silicon dioxide, silicon oxy-nitride, silicon nitride, or carbon-dopedsilicon nitride. In an embodiment, the insulator structure 155 iscomposed of a low-k dielectric material. In an embodiment, the gatedielectric layer 164 includes a layer of a high-k dielectric materialdirectly on the semiconducting oxide material 156.

FIG. 1D illustrates a cross-sectional view taken along a gate “width” ofa bulk Fin-type field effect transistors (FinFET) suitable for use in amonolithic stacked transistor architecture, in accordance with anotherembodiment of the present disclosure. In this example, the FinFET 176 isformed above a bulk semiconductor 178 such as silicon, silicongermanium, gallium arsenide, and the like. A pair of fins 179 is on thebulk semiconductor 178. The fins 179 of the FinFET 176 may be composedof the same material as the bulk semiconductor 178. The bulk FinFET 176includes a gate dielectric 180 that is conformal to the pair of fins179. The gate dielectric may possibly include a transition layer. In anembodiment, the gate dielectric 180 may comprise high-K (HfO2), whilethe transition layer may comprise a thin layer of SiO2. Other materials182 are formed on the gate dielectric 180, such as work functionmetal(s), diffusion barrier(s) and the like. A conductor metal 184, suchas tungsten, titanium nitride, copper, and the like, is formed over theother materials 182, as shown.

FIG. 1E illustrates a cross-sectional view taken along a gate “width” ofa silicon-on-insulator (SOI) FinFET suitable for use in a monolithicstacked transistor architecture, in accordance with further embodimentof the present disclosure. In this example, the SOI FinFET 186 is formedabove a bulk substrate 188. A SOI oxide or bonding layer 190 is formedover the bulk substrate 188. A pair of fins 192 is on the bulk substrate188. The fins 192 of the SOI FinFET 186 may be composed of the samematerial as the bulk substrate 188. The SOI FinFET 186 includes a gatedielectric 180 that is conformal to the pair of fins 192. The gatedielectric 180 may possibly include a transition layer. Other materials182 are formed on the gate dielectric 180, such as work functionmetal(s), diffusion barrier(s) and the like. A conductor metal 184 isformed over the other materials 182, as shown.

In recent years, monolithic stacked transistor architectures have beenused that use three-dimensional multi-gate structures, such as FinFETs.The transistors in such architectures may be formed in both an upperdevice layer and a lower device layer, and therefore, may be referred toas a vertically integrated semiconductors.

FIG. 2 is a three-dimensional view illustrating a lateral cross-sectionof a stacked device architecture according to one embodiment. Thestacked device architecture 200 comprises vertically stacked fin-typetransistor devices formed in a lower device layer 202 a and in an upperdevice layer 202 b. The lower device layer 202 a includes a firststructure comprising a first set of vertical transistor fins 206 a, afirst set of contact metallization 208 a (e.g., gate contacts), and anoptional first set of one or more vertical isolation walls 210 a. Theupper device layer 202 b includes a second structure comprising a secondset of vertical transistor fins 206 b, a second set of contactmetallization 208 b, and an optional second set of one or more isolationwalls 210 b. In one embodiment, the transistor fins 206 a 206 b and thecontact metallization 208 a 208 b form fin-type non-planar transistorson the lower and upper device layers 202 a 202 b, respectively.

Any combination of the fin-type non-planar transistors of FIGS. 1A-1Emay be stacked. For example, in one embodiment, the lower device layer202 a may include bulk FinFETs 176, while the top device layer 202 bincludes SOI FinFETs 186 starting at the bonding layer 190. In a secondembodiment, the lower device layer 202 a may include SOI FinFETs 186,while the top device layer 202 b includes bulk FinFETs 176. In a thirdembodiment, the lower device layer 202 a may include SOI FinFETs 186,while the top device layer 202 b includes TFT devices. And in a fourthembodiment, both the lower and upper device layers 202 a 202 b mayinclude SOI FinFETs 186, bulk FinFETs, or TFT devices.

The upper device layer 202 b is bonded onto the lower device layer 202a. Accordingly, the upper device layer 202 b includes a bonding layermaterial 212, which may comprise an oxide, and an etch-stop layermaterial 214, which may comprise a nitride. In one embodiment, thelower-level of transistors are conventionally fabricated, and then asecond layer of monocrystalline silicon or other semiconductor materialmay be layer transferred and oxide-oxide low temperature bonded to thetop of the lower-level dielectric.

While the use of a vertically integrated semiconductor may reduceoverall footprint of the device, there is very little space availablewithin which metal routing can be formed between the upper device layerand the lower device layer. One known approach for routing metal fromthe upper device layer to the lower device layer utilizes a wrap-aroundinterconnect. However, the use of wrap-around interconnects tends toincrease the cross-sectional footprint of the overall device andnecessitates larger spacing between the components of the semiconductor,thereby eliminating many of the density benefits of vertical devicestacking.

According to the disclosed embodiments, the stacked device architecture200 further includes at least one power isolation wall 204 that extendsfrom a top of the upper device layer 202 b to the bottom of the lowerdevice layer 202 a and is filled with a conductive material 205 suchthat power, and optionally signals, may be routed between transistors onthe upper device layer 202 b and the lower device layer 202 a. In oneembodiment, the conductive material 205 has low resistivity and maycomprise one or more of tungsten, copper, titanium or titanium nitride.

In one embodiment, the power isolation wall 204 may also include aninsulating liner 220 formed conformal to sidewalls of the powerisolation wall 204, as shown in FIG. 2. The insulating liner 220 may beused to prevent conduction to materials adjacent to the power isolationwall 204. The insulating liner 220 may comprise a dielectric materialsuch as an oxide or a nitride material.

In one embodiment, the stacked device architecture 200 may furtherinclude optional insulating isolation walls 210 a and 210 b in one orboth of the upper and lower device layers 202 a and 202 b to isolatevarious transistor devices in the corresponding layer. The insulatingisolation walls 210 a and 210 b are formed as cavities in the upper andlower device layers 202 a and 202 b and are filled with one or moredielectric materials. For example, isolation wall 210 a may be filledwith a lower region wall material 216 a and upper region wall material218 a. Likewise, isolation wall 210 b may be filled with a lower regionwall material 216 b and upper region wall material 218 b. In oneembodiment, the lower region wall materials 218 a and 218 b and theupper region wall materials 216 a and 216 b may comprise titaniumnitride or other nitrides oxides and carbides.

In one embodiment, the location of one or more isolation walls 210 b inthe upper device layer 202 b are intentionally aligned with locations ofcorresponding isolation walls 210 a in the lower device layer 202 a.Although FIG. 2 only shows two isolation walls 210 a and 210 b withinthe stacked device architecture 200, any number may be present.

FIG. 3A illustrates an embodiment where the materials filling the powerisolation wall 204 in the lower device layer 202 a differ from thematerials filling the power isolation wall 204 in the upper device layer202 b. In this embodiment, the power isolation wall 204 in the lowerdevice layer comprises a first type of insulating liner 220 a and afirst type of conducting material 205 a, while the power isolation wall204 in the upper device layer 202 b comprises a second type ofinsulating liner 220 b and a second type of conducting material 205 bthat are different than those in the lower device layer 202 a. Forexample, the first type of conducting metal 205 a in the power isolationwall 204 in the lower device layer 202 a may comprise a non-metalconductor such as titanium nitride, while the second type of conductingmetal 205 b in the power isolation wall 204 in the upper device layer202 b may comprise tungsten. As a second example, the first type ofconducting metal 205 a in the power isolation wall 204 in the lowerdevice layer 202 a may comprise tungsten, while the second type ofconducting metal 205 b in the power isolation wall 204 in the upperdevice layer 202 b may comprise copper. An electrical junction (notshown) may be located between the two different types of conductingmetals 205 a 205 b.

FIG. 3B illustrates another embodiment where the power isolation wall204 is formed without an insulating liner. As an example, the powerisolation wall 204 may not need the insulating liner when there is aninsulator is adjacent to the power isolation wall 204. In addition, thepower isolation wall 204 is shown in the embodiment where the powerisolation wall 204 is filled with different conducting metals 205 a 205b in the lower and upper device layers 202 a 202 b, respectively.

FIGS. 4A-4I are illustrative cross-sectional views representing variousoperations for fabricating an integrated device structure comprising avertically stacked transistor device architecture with a conductingpower isolation wall according to one embodiment.

The process may begin by forming a vertically stacked devicearchitecture having a completely formed lower device layer and at leasta partially formed upper device layer bonded onto the lower devicelayer. Referring to FIG. 4A, in lower device layer 202 a a firststructure is formed comprising a first set of vertical transistor fins206 a, a first set of contact metallization 208 a, and an optional firstset of one or more insulating isolation walls 210 a. In the upper devicelayer 202 b a second structure is formed comprising a second set ofvertical transistor fins 206 b, a second set of contact metallization208 b, and an optional second set of one or more insulating isolationwalls 210 b.

Referring to FIG. 4B, structures in the upper device layer arelithographically masked off with an etch resistant layer 302, where thestructures are other than a selected top insulating isolation wall 300b, which is vertically aligned with a bottom isolation wall 300 a fromthe lower device layer 202 a. The two vertically aligned isolation walls300 a and 300 b will form one power isolation wall.

In the embodiment shown, both the bottom isolation wall 300 a and thetop isolation wall 300 b are filled with a lower region wall material218 and upper region wall material 216 (FIG. 2), but could be filledwith a single type of material. The upper region wall material of thetop isolation wall 300 b may comprise a material that is selected forits' etch selectivity to the type of dielectric material adjacent to thetop isolation wall 210 b. In one embodiment, the upper region wallmaterial may comprise titanium nitride, however other nitrides oxidesand carbides are also acceptable

Materials filling the top isolation wall 300 b are then etched away toform a cavity 304, as shown in FIGS. 4C and 4D. FIG. 4C shows etching ofthe upper region wall material of the top isolation wall 300 b, whileFIG. 4D shows etching of the lower region wall material of the topisolation wall 300 b, which completes removal of the top isolation wall300 b. FIG. 4D also shows etching of the bonding layer material 212 andthe etch-stop layer 214 to extend the cavity 304 to the top of the lowerdevice layer 202 a. Alternatively, if the top isolation wall 300 b isfilled with a single type of material, then the top isolation wall 300 bmay be etched down to the bonding layer material 212 in a single step.

Thereafter, materials filling the bottom isolation wall 300 a areetched, as shown in FIG. 4E. Both the upper region wall material and thelower region wall material are etched from the bottom isolation wall 300a in one or more steps. A bottom insulating layer is etched to extendthe cavity 304 from the upper device layer 202 b through the bottomdevice layer 202 a, as shown in FIG. 4F.

Following evacuation of the upper and lower region wall materials, theoptional insulating liner 220 may be formed conformal to sidewalls ofthe cavity 304, as shown in FIG. 4G. In one embodiment, the insulatingliner 220 comprise a dielectric material that may be formed as a spacer.In one embodiment, the insulating liner may be referred to as anadhesion layer or diffusion block layer. The dielectric material maycomprise an oxide or a nitride material.

The optionally lined cavity 304 is filled with a conductive material 205(i.e., metal or a non-metal conductor) to form the power isolation wall204, as shown in FIG. 4H. In one embodiment, the conductive materialcomprises a material that has low resistivity such as tungsten, copper,titanium or titanium nitride. One purpose of the conductive material isto route power between the lower device layer and the upper devicelayer. However in a further embodiment, the conductive material may beused to also route signals.

At this stage the power isolation wall 204 has been formed within thestacked transistor device assembly that extends at least two devicelevels. The stacked transistor device assembly includes one or morepower isolation walls 204 and in some embodiments, one or moreinsulating isolation walls. In one embodiment, the power isolation walls204 may need to be wider than the non-conductive isolation walls 210.The width of the power isolation wall 204 may be determined by theaspect ratio of the metal fill required to fill regions 205 a and 205 b.The width of regions 205 a and 205 b may also be chosen to achieve anacceptable electrical resistance through the conductive regions 205 aand 205 b. For purposes of example, the conductive power isolation wall204 may require a width of 8-30 nm (width of region 205 a/205 b) inorder to provide for acceptable electrical resistance and metal fillwhile the non-conductive isolation walls 210 may be 5-20 nm in width.

FIG. 4I shows an alternative embodiment where the stacked transistordevice assembly is inverted and polished from the backside usingtraditional chemical mechanical polishing techniques to remove materialsbelow the bottom of the power isolation wall 204. This step exposes boththe top and the bottom of the power isolation wall 204 so thatelectrical connections (not shown) may be formed to either side of theassembly to route to laterally adjacent devices.

In this embodiment, the materials filling both the lower device layerand the upper device layer are the same. It should be apparent to oneskilled in the art, however, than other representative structures couldbe formed. For example, fabrication of the power isolation walls 204 mayoccur following completion of, or during fabrication of, the lowerdevice layer, but before completion of the upper device layer. Thismeans that in one embodiment different materials may be used on thelower and upper device layers of the power isolation walls 204.

In another aspect, the integrated circuit structures described hereinmay be included in an electronic device. As a first example of anapparatus that may include the vertically stacked transistor devicearchitecture with a conducting power isolation wall disclosed herein,FIGS. 5A and 5B are top views of a wafer and dies that include avertically stacked transistor device architecture with one or moreconducting power isolation walls, in accordance with any of theembodiments disclosed herein.

Referring to FIGS. 5A and 5B, a wafer 500 may be composed ofsemiconductor material and may include one or more dies 502 havingintegrated circuit (IC) structures formed on a surface of the wafer 500.Each of the dies 502 may be a repeating unit of a semiconductor productthat includes any suitable IC (e.g., ICs including one or morestructures such as structures 150, 170, 200 or 300). After thefabrication of the semiconductor product is complete (e.g., aftermanufacture of structures 150, 170, 200 or 300), the wafer 500 mayundergo a singulation process in which each of the dies 502 is separatedfrom one another to provide discrete “chips” of the semiconductorproduct. In particular, devices that include a vertically stackedtransistor device architecture with one or more conducting powerisolation walls as disclosed herein may take the form of the wafer 500(e.g., not singulated) or the form of the die 502 (e.g., singulated).The die 502 may include one or more transistors and/or supportingcircuitry to route electrical signals to the transistors, as well as anyother IC components. In some embodiments, the wafer 500 or the die 502may include a memory device (e.g., a static random access memory (SRAM)device), a logic device (e.g., an AND, OR, NAND, or NOR gate), or anyother suitable circuit element. Multiple ones of these devices may becombined on a single die 502. For example, a memory array formed bymultiple memory devices may be formed on a same die 502 as a processingdevice or other logic that is configured to store information in thememory devices or execute instructions stored in the memory array.

FIG. 6 is a cross-sectional side view of an integrated circuit (IC)device that may include a vertically stacked transistor devicearchitecture with one or more conducting power isolation walls, inaccordance with one or more of the embodiments disclosed herein.

Referring to FIG. 6, an IC device 600 is formed on a substrate 602(e.g., the wafer 500 of FIG. 5A) and may be included in a die (e.g., thedie 502 of FIG. 5B), which may be singulated or included in a wafer.Although a few examples of materials from which the substrate 602 may beformed are described above in association with substrate 152, 202, 302or 400, any material that may serve as a foundation for an IC device 600may be used.

The IC device 600 may include one or more device layers, such as devicelayer 604, disposed on the substrate 602. The device layer 604 mayinclude features of one or more transistors 640 (e.g., a verticallystacked transistor device architecture with one or more conducting powerisolation walls described above) formed on the substrate 602. The devicelayer 604 may include, for example, one or more source and/or drain(S/D) regions 620, a gate 622 to control current flow in the transistors640 between the S/D regions 620, and one or more S/D contacts 624 toroute electrical signals to/from the S/D regions 620. The transistors640 may include additional features not depicted for the sake ofclarity, such as device isolation regions, gate contacts, and the like.The transistors 640 are not limited to the type and configurationdepicted in FIG. 6 and may include a wide variety of other types andconfigurations such as, for example, planar transistors, non-planartransistors, or a combination of both. Non-planar transistors mayinclude fin-based transistors, such as double-gate transistors ortri-gate transistors, and wrap-around or all-around gate transistors,such as nanoribbon and nanowire transistors.

Electrical signals, such as power and/or input/output (I/O) signals, maybe routed to and/or from the transistors 640 of the device layer 604through one or more interconnect layers disposed on the device layer 604(illustrated in FIG. 6 as interconnect layers 606-610), where at leastone of the interconnect layers includes a conducting power isolationwall. For example, electrically conductive features of the device layer604 (e.g., the gate 622 and the S/D contacts 624) may be electricallycoupled with the interconnect structures 628 of the interconnect layers606-610. The one or more interconnect layers 606-610 may form aninterlayer dielectric (ILD) stack 619 of the IC device 600.

The interconnect structures 628 may be arranged within the interconnectlayers 606-610 to route electrical signals according to a wide varietyof designs (in particular, the arrangement is not limited to theparticular configuration of interconnect structures 628 depicted in FIG.6). Although a particular number of interconnect layers 606-610 isdepicted in FIG. 6, embodiments of the present disclosure include ICdevices having more or fewer interconnect layers than depicted.

In some embodiments, the interconnect structures 628 may include trenchstructures 628 a (sometimes referred to as “lines”) and/or viastructures 628 b filled with an electrically conductive material such asa metal. The trench structures 628 a may be arranged to route electricalsignals in a direction of a plane that is substantially parallel with asurface of the substrate 602 upon which the device layer 604 is formed.For example, the trench structures 628 a may route electrical signals ina direction in and out of the page from the perspective of FIG. 6. Thevia structures 628 b may be arranged to route electrical signals in adirection of a plane that is substantially perpendicular to the surfaceof the substrate 602 upon which the device layer 604 is formed. In someembodiments, the via structures 628 b may electrically couple trenchstructures 628 a of different interconnect layers 606-610 together.

The interconnect layers 606-610 may include a dielectric material 626disposed between the interconnect structures 628, as shown in FIG. 6. Insome embodiments, the dielectric material 626 disposed between theinterconnect structures 628 in different ones of the interconnect layers606-610 may have different compositions; in other embodiments, thecomposition of the dielectric material 626 between differentinterconnect layers 606-610 may be the same. In either case, suchdielectric materials may be referred to as inter-layer dielectric (ILD)materials.

A first interconnect layer 606 (referred to as Metal 1 or “M1”) may beformed directly on the device layer 604. In some embodiments, the firstinterconnect layer 606 may include trench structures 628 a and/or viastructures 628 b, as shown. The trench structures 628 a of the firstinterconnect layer 606 may be coupled with contacts (e.g., the S/Dcontacts 624) of the device layer 604.

A second interconnect layer 608 (referred to as Metal 2 or “M2”) may beformed directly on the first interconnect layer 606. In someembodiments, the second interconnect layer 608 may include viastructures 628 b to couple the trench structures 628 a of the secondinterconnect layer 608 with the trench structures 628 a of the firstinterconnect layer 606. Although the trench structures 628 a and the viastructures 628 b are structurally delineated with a line within eachinterconnect layer (e.g., within the second interconnect layer 608) forthe sake of clarity, the trench structures 628 a and the via structures628 b may be structurally and/or materially contiguous (e.g.,simultaneously filled during a dual-damascene process) in someembodiments.

A conducting power isolation wall may be formed, for example, on M1 andM2 or higher to transmit power between the transistors on M1 and thetransistors on M2.

A third interconnect layer 610 (referred to as Metal 3 or “M3”) (andadditional interconnect layers, as desired) may be formed in successionon the second interconnect layer 608 according to similar techniques andconfigurations described in connection with the second interconnectlayer 608 or the first interconnect layer 606.

The IC device 600 may include a solder resist material 634 (e.g.,polyimide or similar material) and one or more bond pads 636 formed onthe interconnect layers 606-610. The bond pads 636 may be electricallycoupled with the interconnect structures 628 and configured to route theelectrical signals of the transistor(s) 640 to other external devices.For example, solder bonds may be formed on the one or more bond pads 636to mechanically and/or electrically couple a chip including the ICdevice 600 with another component (e.g., a circuit board). The IC device600 may have other alternative configurations to route the electricalsignals from the interconnect layers 606-610 than depicted in otherembodiments. For example, the bond pads 636 may be replaced by or mayfurther include other analogous features (e.g., posts) that route theelectrical signals to external components.

FIG. 7 is a cross-sectional side view of an integrated circuit (IC)device assembly that may include a vertically stacked transistor devicearchitecture with one or more conducting power isolation walls, inaccordance with one or more of the embodiments disclosed herein.

Referring to FIG. 7, an IC device assembly 700 includes componentshaving one or more integrated circuit structures described herein. TheIC device assembly 700 includes a number of components disposed on acircuit board 702 (which may be, e.g., a motherboard). The IC deviceassembly 700 includes components disposed on a first face 740 of thecircuit board 702 and an opposing second face 742 of the circuit board702. Generally, components may be disposed on one or both faces 740 and742. In particular, any suitable ones of the components of the IC deviceassembly 700 may include a number of the TFT structures 150, 170, 200 or300 disclosed herein.

In some embodiments, the circuit board 702 may be a printed circuitboard (PCB) including multiple metal layers separated from one anotherby layers of dielectric material and interconnected by electricallyconductive vias. Any one or more of the metal layers may be formed in adesired circuit pattern to route electrical signals (optionally inconjunction with other metal layers) between the components coupled tothe circuit board 702. In other embodiments, the circuit board 702 maybe a non-PCB substrate.

The IC device assembly 700 illustrated in FIG. 7 includes apackage-on-interposer structure 736 coupled to the first face 740 of thecircuit board 702 by coupling components 716. The coupling components716 may electrically and mechanically couple the package-on-interposerstructure 736 to the circuit board 702, and may include solder balls (asshown in FIG. 7), male and female portions of a socket, an adhesive, anunderfill material, and/or any other suitable electrical and/ormechanical coupling structure.

The package-on-interposer structure 736 may include an IC package 720coupled to an interposer 704 by coupling components 718. The couplingcomponents 718 may take any suitable form for the application, such asthe forms discussed above with reference to the coupling components 716.Although a single IC package 720 is shown in FIG. 7, multiple ICpackages may be coupled to the interposer 704. It is to be appreciatedthat additional interposers may be coupled to the interposer 704. Theinterposer 704 may provide an intervening substrate used to bridge thecircuit board 702 and the IC package 720. The IC package 720 may be orinclude, for example, a die (the die 502 of FIG. 5B), an IC device(e.g., the IC device 600 of FIG. 6), or any other suitable component.Generally, the interposer 704 may spread a connection to a wider pitchor reroute a connection to a different connection. For example, theinterposer 704 may couple the IC package 720 (e.g., a die) to a ballgrid array (BGA) of the coupling components 716 for coupling to thecircuit board 702. In the embodiment illustrated in FIG. 7, the ICpackage 720 and the circuit board 702 are attached to opposing sides ofthe interposer 704. In other embodiments, the IC package 720 and thecircuit board 702 may be attached to a same side of the interposer 704.In some embodiments, three or more components may be interconnected byway of the interposer 704.

The interposer 704 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In some implementations, the interposer 704may be formed of alternate rigid or flexible materials that may includethe same materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials. The interposer 704 may include metal interconnects 708 andvias 710, including but not limited to through-silicon vias (TSVs) 706.The interposer 704 may further include embedded devices 714, includingboth passive and active devices. Such devices may include, but are notlimited to, capacitors, decoupling capacitors, resistors, inductors,fuses, diodes, transformers, sensors, electrostatic discharge (ESD)devices, and memory devices. More complex devices such asradio-frequency (RF) devices, power amplifiers, power managementdevices, antennas, arrays, sensors, and microelectromechanical systems(MEMS) devices may also be formed on the interposer 704. Thepackage-on-interposer structure 736 may take the form of any of thepackage-on-interposer structures known in the art.

The IC device assembly 700 may include an IC package 724 coupled to thefirst face 740 of the circuit board 702 by coupling components 722. Thecoupling components 722 may take the form of any of the embodimentsdiscussed above with reference to the coupling components 716, and theIC package 724 may take the form of any of the embodiments discussedabove with reference to the IC package 720.

The IC device assembly 700 illustrated in FIG. 7 includes apackage-on-package structure 734 coupled to the second face 742 of thecircuit board 702 by coupling components 728. The package-on-packagestructure 734 may include an IC package 726 and an IC package 732coupled together by coupling components 730 such that the IC package 726is disposed between the circuit board 702 and the IC package 732. Thecoupling components 728 and 730 may take the form of any of theembodiments of the coupling components 716 discussed above, and the ICpackages 726 and 732 may take the form of any of the embodiments of theIC package 720 discussed above. The package-on-package structure 734 maybe configured in accordance with any of the package-on-packagestructures known in the art.

Embodiments disclosed herein may be used to manufacture a wide varietyof different types of integrated circuits and/or microelectronicdevices. Examples of such integrated circuits include, but are notlimited to, processors, chipset components, graphics processors, digitalsignal processors, micro-controllers, and the like. In otherembodiments, semiconductor memory may be manufactured. Moreover, theintegrated circuits or other microelectronic devices may be used in awide variety of electronic devices known in the arts. For example, incomputer systems (e.g., desktop, laptop, server), cellular phones,personal electronics, etc. The integrated circuits may be coupled with abus and other components in the systems. For example, a processor may becoupled by one or more buses to a memory, a chipset, etc. Each of theprocessor, the memory, and the chipset, may potentially be manufacturedusing the approaches disclosed herein.

FIG. 8 illustrates a computing device 800 in accordance with oneimplementation of the disclosure. The computing device 800 houses aboard 802. The board 802 may include a number of components, includingbut not limited to a processor 804 and at least one communication chip806. The processor 804 is physically and electrically coupled to theboard 802. In some implementations the at least one communication chip806 is also physically and electrically coupled to the board 802. Infurther implementations, the communication chip 806 is part of theprocessor 804.

Depending on its applications, computing device 800 may include othercomponents that may or may not be physically and electrically coupled tothe board 802. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 806 enables wireless communications for thetransfer of data to and from the computing device 800. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 806 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 800 may include a plurality ofcommunication chips 806. For instance, a first communication chip 806may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 806 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 804 of the computing device 800 includes an integratedcircuit die packaged within the processor 804. In some implementationsof the disclosure, the integrated circuit die of the processor includesa vertically stacked transistor device architecture with one or moreconducting power isolation walls, in accordance with implementations ofembodiments of the disclosure. The term “processor” may refer to anydevice or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory.

The communication chip 806 also includes an integrated circuit diepackaged within the communication chip 806. In accordance with anotherimplementation of embodiments of the disclosure, the integrated circuitdie of the communication chip includes one or more thin film transistorshaving relatively increased width, in accordance with implementations ofembodiments of the disclosure.

In further implementations, another component housed within thecomputing device 800 may contain an integrated circuit die that includesa vertically stacked transistor device architecture with one or moreconducting power isolation walls, in accordance with implementations ofembodiments of the disclosure.

In various implementations, the computing device 800 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 800 may be any other electronic device that processes data.

Thus, embodiments described herein a vertically stacked transistordevice architecture with one or more conducting power isolation walls.The above description of illustrated implementations of embodiments ofthe disclosure, including what is described in the Abstract, is notintended to be exhaustive or to limit the disclosure to the preciseforms disclosed. While specific implementations of, and examples for,the disclosure are described herein for illustrative purposes, variousequivalent modifications are possible within the scope of thedisclosure, as those skilled in the relevant art will recognize.

These modifications may be made to the disclosure in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the disclosure to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of thedisclosure is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Example Embodiment 1

An integrated circuit structure comprises a lower device layer thatincludes a first structure comprising a first set of transistor fins anda first set of contact metallization. An upper device layer is bondedonto the lower device layer, where the upper device layer includes asecond structure comprising a second set of transistor fins and a secondset of contact metallization. At least one power isolation wall extendsfrom a top of the upper device layer to the bottom of the lower devicelayer, wherein the power isolation wall is filled with a conductivematerial such that power is routed between transistor devices on theupper device layer and the lower device layer.

Example Embodiment 2

The integrated circuit structure of example embodiment 1, wherein thepower isolation wall routes signals in addition to the power.

Example Embodiment 3

The integrated circuit structure of example embodiment 1 or 2, whereinthe conductive material filling the at least one power isolation wallcomprises one or more of tungsten, copper, titanium or titanium nitride.

Example Embodiment 4

The integrated circuit structure of example embodiment 1, 2, or 3,further including an insulating liner conformal to sidewalls of the atleast one power isolation wall.

Example Embodiment 5

The integrated circuit structure of example embodiment 4, wherein theinsulating liner comprises a dielectric material.

Example Embodiment 6

The integrated circuit structure of example embodiment 1, 2, 3, or 4,wherein the at least one power isolation wall is filled with a lowerregion conducting material and an upper region conducting material.

Example Embodiment 7

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5, or6, wherein the at least one power isolation wall in the lower devicelayer comprises a first type of insulating liner and a first type ofconducting metal, and wherein the at least one power isolation wall inthe upper device layer comprises a second type of insulating liner and asecond type of conducting metal.

Example Embodiment 8

The integrated circuit structure of example embodiment 7, furtherincluding an electrical junction located between the first type ofconducting metal and the second type of conducting metal.

Example Embodiment 9

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5, 6,7, or 8, wherein the first structure in the lower device layer furtherincludes a first set of one or more insulating isolation walls that arefilled with one or more insulating dielectric materials.

Example Embodiment 10

The integrated circuit structure of example embodiment 9, wherein theone or more dielectric materials comprises a lower region wall materialand upper region wall material.

Example Embodiment 11

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5, 6,7, 8, or 9, wherein the second structure in the upper device layerfurther includes a second set of one or more insulating isolation wallsthat are filled with one or more dielectric materials.

Example Embodiment 12

The integrated circuit structure of example embodiment 11, wherein theone or more dielectric materials comprises a lower region wall materialand upper region wall material.

Example Embodiment 13

An integrated circuit structure comprises a lower device layer thatincludes a first structure comprising a first set of transistor fins, afirst set of contact metallization, and a first set of one or moreinsulation isolation walls. An upper device layer is bonded onto thelower device layer, where the upper device layer includes a secondstructure comprising a second set of transistor fins, a second set ofcontact metallization and a second set of one or more insulationisolation walls in the upper device layer. A power isolation wallextends from a top of the upper device layer to the bottom of the lowerdevice layer, wherein the power isolation wall is filled with aconductive material such that power and signals are routed betweentransistor devices on the upper device layer and the lower device layer.

Example Embodiment 14

The integrated circuit structure of example embodiment 13, wherein theconductive material filling the at least one power isolation wallcomprises one or more of tungsten, copper, titanium or titanium nitride.

Example Embodiment 15

The integrated circuit structure of example embodiment 13 or 14, furtherincluding an insulating liner conformal to sidewalls of the at least onepower isolation wall.

Example Embodiment 16

The integrated circuit structure of example embodiment 15, wherein theinsulating liner comprises a dielectric material.

Example Embodiment 17

The integrated circuit structure of example embodiment 13, 14, 15, or16, wherein the at least one power isolation wall is filled with a lowerregion conducting material and an upper region conducting material.

Example Embodiment 18

The integrated circuit structure of example embodiment 13, 14, 15, 16,or 17, wherein the at least one power isolation wall in the lower devicelayer comprises a first type of insulating liner and a first type ofconducting metal, and wherein the at least one power isolation wall inthe upper device layer comprises a second type of insulating liner and asecond type of conducting metal.

Example Embodiment 19

The integrated circuit structure of example embodiment 18, furtherincluding an electrical junction located between the first type ofconducting metal and the second type of conducting metal.

Example Embodiment 20

The integrated circuit structure of example embodiment 13, 14, 15, 16,17, 18, or 19, wherein the first set of one or more insulating isolationwalls and the second set of one or more insulating isolation walls arefilled with one or more insulating dielectric materials.

Example Embodiment 21

The integrated circuit structure of example embodiment 20, wherein theone or more dielectric materials comprises a lower region wall materialand upper region wall material.

Example Embodiment 22

A method of fabricating an integrated device structure comprising avertically stacked transistor device architecture with a conductingpower isolation wall includes forming a vertically stacked devicearchitecture having a lower device layer and at least a partially formedupper device layer bonded onto the lower device layer. In the lowerdevice layer, a first structure is formed comprising a first set oftransistor fins, a first set of contact metallization, and a first setof one or more insulating isolation walls. In the upper device layer, asecond structure is formed comprising a second set of transistor fins, asecond set of contact metallization, and a second set of one or moreinsulating isolation walls. Structures are masked off in the upperdevice layer with an etch resistant layer, other than a particular oneof the bottom insulating isolation walls in the upper device layer thatis vertically aligned with a particular one of the bottom isolationwalls. Materials filling the particular one of the insulating isolationwalls are etched to form a cavity. Materials filling the particular oneof the bottom insulating isolation wall are etched to extend the cavityfrom the upper device layer through the bottom device layer. The cavityis filled with a conductive metal to form the power isolation wall thatroutes power between the lower device layer and the upper device layer.

Example Embodiment 23

The method of example embodiment 22, further comprising forming aninsulating liner conformal to sidewalls of the cavity prior to fillingthe cavity with the conductive metal.

Example Embodiment 24

The method of example embodiment 22 or 23, further comprising using thepower isolation wall to route both power and signals between the lowerdevice layer and the upper device layer

Example Embodiment 25

The method of example embodiment 22, 23 or 24, further comprising usingone or more of tungsten, copper, titanium or titanium nitride as theconductive metal.

What is claimed is:
 1. An integrated circuit structure, comprising: alower device layer that includes a first structure comprising a firstset of transistor fins and a first set of contact metallization; anupper device layer bonded onto the lower device layer, the upper devicelayer including a second structure comprising a second set of transistorfins and a second set of contact metallization; and at least one powerisolation wall that extends from a top of the upper device layer to thebottom of the lower device layer, wherein the power isolation wall isfilled with a conductive material such that power is routed betweentransistor devices on the upper device layer and the lower device layer.2. The integrated circuit structure of claim 1, wherein the powerisolation wall routes signals in addition to the power.
 3. Theintegrated circuit structure of claim 1, wherein the conductive materialfilling the at least one power isolation wall comprises one or more oftungsten, copper, titanium or titanium nitride.
 4. The integratedcircuit structure of claim 1, further including an insulating linerconformal to sidewalls of the at least one power isolation wall.
 5. Theintegrated circuit structure of claim 4, wherein the insulating linercomprises a dielectric material.
 6. The integrated circuit structure ofclaim 1, wherein the at least one power isolation wall is filled with alower region conducting material and an upper region conductingmaterial.
 7. The integrated circuit structure of claim 1, wherein the atleast one power isolation wall in the lower device layer comprises afirst type of insulating liner and a first type of conducting metal, andwherein the at least one power isolation wall in the upper device layercomprises a second type of insulating liner and a second type ofconducting metal.
 8. The integrated circuit structure of claim 7,further including an electrical junction located between the first typeof conducting metal and the second type of conducting metal.
 9. Theintegrated circuit structure of claim 1, wherein the first structure inthe lower device layer further includes a first set of one or moreinsulating isolation walls that are filled with one or more insulatingdielectric materials.
 10. The integrated circuit structure of claim 9,wherein the one or more dielectric materials comprises a lower regionwall material and upper region wall material.
 11. The integrated circuitstructure of claim 1, wherein the second structure in the upper devicelayer further includes a second set of one or more insulating isolationwalls that are filled with one or more dielectric materials.
 12. Theintegrated circuit structure of claim 11, wherein the one or moredielectric materials comprises a lower region wall material and upperregion wall material.
 13. An integrated circuit structure, comprising: alower device layer that includes a first structure comprising a firstset of transistor fins, a first set of contact metallization, and afirst set of one or more insulation isolation walls; an upper devicelayer bonded onto the lower device layer, the upper device layerincludes a second structure comprising a second set of transistor fins,a second set of contact metallization and a second set of one or moreinsulation isolation walls in the upper device layer; and a powerisolation wall that extends from a top of the upper device layer to thebottom of the lower device layer, wherein the power isolation wall isfilled with a conductive material such that power and signals are routedbetween transistor devices on the upper device layer and the lowerdevice layer.
 14. The integrated circuit structure of claim 13, whereinthe conductive material filling the at least one power isolation wallcomprises one or more of tungsten, copper, titanium or titanium nitride.15. The integrated circuit structure of claim 13, further including aninsulating liner conformal to sidewalls of the at least one powerisolation wall.
 16. The integrated circuit structure of claim 15,wherein the insulating liner comprises a dielectric material.
 17. Theintegrated circuit structure of claim 13, wherein the at least one powerisolation wall is filled with a lower region conducting material and anupper region conducting material.
 18. The integrated circuit structureof claim 13, wherein the at least one power isolation wall in the lowerdevice layer comprises a first type of insulating liner and a first typeof conducting metal, and wherein the at least one power isolation wallin the upper device layer comprises a second type of insulating linerand a second type of conducting metal.
 19. The integrated circuitstructure of claim 18, further including an electrical junction locatedbetween the first type of conducting metal and the second type ofconducting metal.
 20. The integrated circuit structure of claim 13,wherein the first set of one or more insulating isolation walls and thesecond set of one or more insulating isolation walls are filled with oneor more insulating dielectric materials.
 21. The integrated circuitstructure of claim 20, wherein the one or more dielectric materialscomprises a lower region wall material and upper region wall material.22. A method of fabricating an integrated device structure comprising avertically stacked transistor device architecture with a conductingpower isolation wall, the method comprising: forming a verticallystacked device architecture having a lower device layer and at least apartially formed upper device layer bonded onto the lower device layer;forming in the lower device layer, a first structure comprising a firstset of transistor fins, a first set of contact metallization, and afirst set of one or more insulating isolation walls; forming in theupper device layer, a second structure comprising a second set oftransistor fins, a second set of contact metallization, and a second setof one or more insulating isolation walls; masking off structures in theupper device layer with an etch resistant layer other than a particularone of the bottom insulating isolation walls in the upper device layerthat is vertically aligned with a particular one of the bottom isolationwalls; etching materials filling the particular one of the insulatingisolation walls to form a cavity; etching materials filling theparticular one of the bottom insulating isolation wall to extend thecavity from the upper device layer through the bottom device layer; andfilling the cavity with a conductive metal to form the power isolationwall that routes power between the lower device layer and the upperdevice layer.
 23. The method of claim 22, further comprising forming aninsulating liner conformal to sidewalls of the cavity prior to fillingthe cavity with the conductive metal.
 24. The method of claim 22,further comprising using the power isolation wall to route both powerand signals between the lower device layer and the upper device layer.25. The method of claim 22, further comprising using one or more oftungsten, copper, titanium or titanium nitride as the conductive metal.